Single FETs, MOSFETs - chinesepart Makes it Effortless

Drain to Source Voltage (Vdss)：

Rds On (Max) @ Id, Vgs：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Power Dissipation (Max)：

Filter：

2 Records

Image	Part	Manufacturer	Description	Factory Lead Time		Stock	Action
	TW015N65C,S1F	Toshiba Electronic Devices and Storage Corporation	G3 650V SIC-MOSFET ...	1-3 days	RFQ	145 In-stock	View details Get Quote
	TW015N120C,S1F	Toshiba Electronic Devices and Storage Corporation	G3 1200V SIC-MOSFET...	1-3 days	RFQ	6,459 In-stock	View details Get Quote

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