PMCM650VNEZ

Manufacturer :

NXP Semiconductors

Product Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

6.4A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.4 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1060 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-XFBGA, WLCSP

Power Dissipation (Max) :

556mW (Ta), 12.5W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

25mOhm @ 3A, 4.5V

Supplier Device Package :

6-WLCSP (1.48x0.98)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

900mV @ 250µA