UPA2810T1L-E2-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

13A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

40 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1860 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Power Dissipation (Max) :

1.5W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

12mOhm @ 13A, 10V

Supplier Device Package :

8-DFN3333 (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 1mA