NP28N10SDE-E1-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

28A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

75 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3300 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation (Max) :

1.2W (Ta), 100W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

52mOhm @ 14A, 10V

Supplier Device Package :

TO-252 (MP-3ZK)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA