TPCF8B01(TE85L,F,M

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

2.7A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

Schottky Diode (Isolated)

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

6 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

470 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-SMD, Flat Lead

Power Dissipation (Max) :

330mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

110mOhm @ 1.4A, 4.5V

Supplier Device Package :

VS-8 (2.9x1.5)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.2V @ 200µA