TPC8109(TE12L)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Single FETs, MOSFETs

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

45 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2260 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

8-SOIC (0.173", 4.40mm Width)

Power Dissipation (Max) :

-

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

20mOhm @ 5A, 10V

Supplier Device Package :

8-SOP (5.5x6.0)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2V @ 1mA